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APTGF530U120D4G
Single switch NPT IGBT Power Module
1
VCES = 1200V IC = 530A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * * * * Kelvin emitter for easy drive M6 connectors for power M4 connectors for signal High level of integration
3 5 2
Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C Max ratings 1200 700 530 1200 20 3900 1200A @ 1100V Unit V A V W
APTGF530U120D4G - Rev0 July, 2008
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGF530U120D4G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) VGE(th) IGES Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V ;VCE = 1200V Tj = 25C VGE =15V IC = 600A Tj = 125C VGE = VCE, IC = 16mA VGE = 20V, VCE = 0V Min Typ 3.2 3.9 5.5 Max 5 3.7 6.5 400 Unit mA V V nA
4.5
Dynamic Characteristics
Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=15V, IC=600A VCE=600V Inductive Switching (25C) VGE = 15V VBus = 600V IC = 600A RG = 1.5 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 600A RG = 1.5 VGE = 15V Tj = 125C VBus = 600V IC = 600A Tj = 125C RG = 1.5 VGE 15V ; VBus = 900V tp 10s ; Tj = 125C Min Typ 37 5.6 2.8 6.3 100 60 530 40 110 70 550 50 22 mJ 46 3900 A ns Max Unit nF C
ns
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRRM IF VF trr Qrr Err
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C IF = 480A IF = 960A IF = 480A
Min 1200
Typ
Max 800 4000
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
VR=1200V
IF = 480A VR = 800V
di/dt =1600A/s
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
350 4.5 23 12 24
ns C mJ
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APTGF530U120D4G - Rev0 July, 2008
Tj = 125C Tj = 25C
480 2.5 3 1.8 265
3 V
APTGF530U120D4G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight M6 M4 IGBT Diode 2500 -40 -40 -40 3 1 Min Typ Max 0.032 0.07 150 125 125 5 2 350 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
D4 Package outline (dimensions in mm)
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APTGF530U120D4G - Rev0 July, 2008
APTGF530U120D4G
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 1200 1000 800 IC (A)
VGE=12V TJ = 125C VGE=20V VGE=15V
1200 1000
IC (A)
TJ=25C
800 600 400 200 0 0 1 2 3 VCE (V) 4 5 6
TJ=125C
600 400 200 0 0 1 2 3 4 VCE (V) 5 6
VGE=9V
1200 1000 800 IC (A)
Transfert Characteristics 160 140 120 E (mJ) 100 80 60 40 20 0 5 6 7 8 9 10 11 12 0
Energy losses vs Collector Current
VCE = 600V VGE = 15V RG = 1.5 TJ = 125C
Eoff
600 400 200 0
TJ=125C
TJ=25C
Eon
Er
200
400
600 IC (A)
800
1000 1200
VGE (V) Switching Energy Losses vs Gate Resistance 225 200 175 150 E (mJ) 125 100 75 50 25 0 0 2 4 6 8 10 12 Gate Resistance (ohms) 14
Er VCE = 600V VGE =15V IC = 600A TJ = 125C Eon
Reverse Bias Safe Operating Area 1400 1200 1000 IC (A)
Eoff
800 600 400 200 0 0 300 600 900 1200 1500 VCE (V)
VGE=15V TJ=125C RG=1.5
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.035 Thermal Impedance (C/W) 0.03 0.025 0.02 0.015 0.01 0.005 0.9 0.7
IGBT
0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds)
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APTGF530U120D4G - Rev0 July, 2008
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APTGF530U120D4G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 80 60 40 20 0 100
VCE=600V D=50% RG=1.5 TJ=125C TC=75C ZVS hard switching
Forward Characteristic of diode 1200 1000 800 IF (A) 600 400 200 0 0.00
TJ=125C
ZCS
TJ=25C
200
300
400 IC (A)
500
600
700
800
1.00
2.00 VF (V)
3.00
4.00
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.08 Thermal Impedance (C/W) 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse
Diode
0 0.00001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTGF530U120D4G - Rev0 July, 2008

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